document number: 65018 www.vishay.com s10-1996-rev. b, 20-sep-10 1 automotive p-channel 40 v (d-s) 175 c mosfet sqd50p04-09l vishay siliconix features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? package with low thermal resistance ? compliant to rohs directive 2002/95/ec ? aec-q101 qualified d ? find out more about vishays automotive grade product requirements at: www.vishay.com/applications notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" square pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) - 40 r ds(on) ( ? ) at v gs = - 10 v 0.0094 r ds(on) ( ? ) at v gs = - 4.5 v 0.0190 i d (a) - 50 configuration single s g d p-channel mosfet to-252 s gd top view drain connected to tab ordering information package to-252 lead (pb)-free and halo gen-free SQD50P04-09L-GE3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 40 v gate-source voltage v gs 20 continuous drain current a t c = 25 c i d - 50 a t c = 125 c - 50 continuous source curre nt (diode conduction) a i s - 50 pulsed drain current b i dm - 200 single pulse avalanche current l = 0.1 mh i as - 50 single pulse avalanche energy e as 125 mj maximum power dissipation b t c = 25 c p d 136 w t c = 125 c 45 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 50 c/w junction-to-case (drain) r thjc 1.1
www.vishay.com document number: 65018 2 s10-1996-rev. b, 20-sep-10 sqd50p04-09l vishay siliconix notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings may cause permanen t damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the sp ecifications is not implied. exposure to absolute maximum rating conditions for extended peri ods may affect de vice reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = - 250 a - 40 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.5 - - 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = - 40 v - - - 1 a v gs = 0 v v ds = - 40 v, t j = 125 c - - - 50 v gs = 0 v v ds = - 40 v, t j = 175 c - - - 150 on-state drain current a i d(on) v gs = - 10 v v ds ??? - 5 v - 50 - - a drain-source on-state resistance a r ds(on) v gs = - 10 v i d = - 17 a - 0.0076 0.0094 ? v gs = - 10 v i d = - 50 a, t j = 125 c - - 0.014 v gs = - 10 v i d = - 50 a, t j = 175 c - - 0.017 v gs = - 4.5 v i d = - 14 a - 0.012 0.019 forward transconductance b g fs v ds = - 15 v, i d = - 17 a - 46 - s dynamic b input capacitance c iss v gs = 0 v v ds = - 20 v, f = 1 mhz - 5339 6675 pf output capacitance c oss - 852 1065 reverse transfer capacitance c rss - 681 855 total gate charge c q g v gs = - 10 v v ds = - 20 v, i d = - 50 a - 103 155 nc gate-source charge c q gs -24- gate-drain charge c q gd -16- turn-on delay time c t d(on) v dd = - 20 v, r l = 0.4 ? i d ? - 50 a, v gen = - 10 v, r g = 1 ? -1320 ns rise time c t r -1523 turn-off delay time c t d(off) -6192 fall time c t f -1929 source-drain diode ratings and characteristics b pulsed current a i sm - - - 200 a forward voltage v sd i f = - 50 a, v gs = 0 v - - 0.95 - 1.5 v
document number: 65018 www.vishay.com s10-1996-rev. b, 20-sep-10 3 sqd50p04-09l vishay siliconix typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 20 40 60 80 100 0 3 6 9 12 15 v gs =10vthru5v v gs =4v v gs =2v,1v v gs =3v v d s - drain-to- s ource voltage (v) i d - drain current (a) 0 20 40 60 80 100 0 1632486480 i d - drain current (a) - tran s conductance ( s ) g f s t c = 125 c t c = 25 c t c = - 55 c 0 1000 2000 3000 4000 5000 6000 7000 8000 0 5 10 15 20 25 30 35 40 c i ss c o ss c r ss v d s - drain-to- s ource voltage (v) c - capacitance (pf) 0 20 40 60 80 100 012345 t c = 125 c t c = 25 c t c = - 55 c v gs - g ate-to- s ource voltage (v) i d - drain current (a) 0 0.01 0.02 0.03 0.04 0.05 0 20406080100 v gs =4.5v v gs =10v r d s (on) - on-re s i s tance ( ) i d - drain current (a) 0 2 4 6 8 10 0 20 40 60 80 100 120 i d =50a v d s =20v q g - total g ate charge (nc) v gs - g ate-to- s ource voltage (v)
www.vishay.com document number: 65018 4 s10-1996-rev. b, 20-sep-10 sqd50p04-09l vishay siliconix typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diode forward voltage threshold voltage on-resistance vs. junction temperature - 50 - 25 0 25 50 75 100 125 150 175 i d =24a v gs =10v t j - junction temperature (c) (normalized) r d s (on) - on-re s i s tance 0.5 0.8 1.1 1.4 1.7 2.0 2.3 0 0.02 0.04 0.06 0.08 0.10 0246810 t j =25 c t j = 150 c r d s (on) - on-re s i s tance ( ) v gs - g ate-to- s ource voltage (v) 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain v oltage ( v ) t j = 25 c t j = 150 c - 0.4 - 0.1 0.2 0.5 0.8 1.1 - 50 - 25 0 25 50 75 100 125 150 175 i d =5ma i d = 250 a v gs (th) variance (v) t j - temperature (c) - 55 - 53 - 51 - 49 - 47 - 45 - 50 - 25 0 25 50 75 100 125 150 175 v ds - drain-to-source v oltage ( v ) t j - junction temperature (c) i d = 10 ma
document number: 65018 www.vishay.com s10-1996-rev. b, 20-sep-10 5 sqd50p04-09l vishay siliconix thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized th ermal transient impedance, junction-to-ambient v ds - drain-to-source v oltage ( v ) * v gs minimum v gs at w hich r ds(on) is specified - drain current (a) i d t c = 25 c single pulse 1 ms 100 ms, 1 s, 10 s, dc 100 s r ds(on) * limited b y 10 ms 0.01 0.1 1 10 100 b v dss limited i dm limited i d limited 0.01 0.1 1 10 100 1000 sq u are wave p u lse d u ration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 10 normalized eff ective transient thermal impedance 1000 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 100 1
www.vishay.com document number: 65018 6 s10-1996-rev. b, 20-sep-10 sqd50p04-09l vishay siliconix thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal impedance junction-to-case (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062", double sided with 2 oz . copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldwide manufa cturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65018 . sq u are wave p u lse d u ration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 10 normalized eff ective transient thermal impedance 100 0.2 0.1 d u ty cycle = 0.5 1 0.02 0.05 single p u lse
document number: 71197 www.vishay.com 18-apr-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package information vishay siliconix to-252aa case outline note ? dimension l3 is for reference only. l2 d l1 l3 b b1 e1 e1 d1 a1 c a2 gage plane height (0.5 mm) e b2 e c1 a l h millimeters inches dim. min. max. min. max. a 2.21 2.38 0.087 0.094 a1 0.89 1.14 0.035 0.045 a2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.10 4.45 0.161 0.175 e 6.48 6.73 0.255 0.265 e1 4.49 5.50 0.177 0.217 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.65 10.41 0.380 0.410 l 1.40 1.78 0.055 0.070 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 1.15 1.52 0.040 0.060 ecn: t11-0110-rev. l, 18-apr-11 dwg: 5347
application note 826 vishay siliconix document number: 72594 www.vishay.com revision: 21-jan-08 3 application note recommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index return to index
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
